Korean researchers have developed, for the first time in Korea, a 200Gbps-class photodetector device for use in hyperscale AI data centers and 5G/6G mobile communications infrastructure. The technology enables ultrahigh-speed data reception fast enough to transmit five 5GB full HD movies per second. The results of this study were presented at OECC 2025, held in Sapporo, Japan, and were recently published in Optics Express.
Electronics and Telecommunications Research Institute (ETRI) announced that it has developed a photodetector device capable of processing 200Gbps-class optical signals per channel. A photodetector is a key semiconductor component that converts optical signals into electrical signals and is essential in determining data reception performance in data centers and communication networks.
The photodetector device developed by the researchers simultaneously achieved a bandwidth of 70GHz or higher, high responsivity of 0.75A/W or greater, and dimensions of 0.5mm × 0.4mm. In particular, applying a "rear-lens integrated structure" that monolithically integrates a convex lens made of indium phosphide (InP) on the back of the chip significantly improved optical reception efficiency and alignment convenience. The entire process, from design to fabrication, was implemented using purely domestic technology.
The device is expected to be applied in the receiver section of optical transceivers for internal AI data center networks. In data center tower racks, line cards carry many optical transceivers, making the performance and cost efficiency of key components important.
ETRI's rear-lens integrated structure does not require separate light-receiving lens components, which can simplify packaging and is expected to reduce costs when manufacturing 800Gbps and 1.6Tbps optical modules.
Photodetector devices widely used in data centers typically offer data rates of about 112Gbps per channel. Through this technology development, ETRI made it possible to process optical signals of up to 224Gbps per channel, increasing data processing capacity to about twice the existing level.
With the recent spread of AI, cloud, OTT, virtual reality (VR) and augmented reality (AR) services driving a surge in data traffic, the importance of securing ultrahigh-speed, high-capacity optical device technology is growing.
200Gbps-class photodetector chips represent highly advanced technology that only a small number of companies worldwide can develop. Based on indium gallium arsenide (InGaAs) photodetector technology and experience operating a compound semiconductor foundry, ETRI succeeded in securing core source technologies.
This is expected to reduce reliance on foreign suppliers and strengthen the competitiveness of Korea's optical device and components industry. In addition, the monolithic rear-lens integrated structure is expected to help secure price competitiveness in the next-generation 800Gbps and 1.6Tbps optical module market.
Kwon Yong Hwan, assistant vice president of ETRI's Photonic/Wireless Devices Research Division, said, "By developing, for the first time in Korea, core photodetector device technology applicable to the fast-growing AI data center and 5G/6G markets, we are now able to contribute to strengthening the competitiveness of Korea's optical components industry."
Han Young Tak, principal researcher at ETRI's Optical Communication Components Research Section, also explained, "The key to this achievement was securing both core source technologies and stable foundry operation capabilities in the field of compound opto-semiconductors, which is highly sensitive to process variables."
ETRI has filed domestic and international patents related to this technology and completed the transfer of the technology to Wooriro Co., Ltd. It plans to actively support industrial application and commercialization so it can compete with global companies in future AI data center and 5G/6G communications markets.
According to market research firm LightCounting, the global optical transceiver market is projected to grow threefold, from $6 billion in 2019 to $18 billion in 2026.
Publication details
Shinmo An et al, 3-dB bandwidth enhanced InGaAs PIN photodiode by inductive CPW electrode for datacenter applications, Optics Express (2026). DOI: 10.1364/oe.582056
Who's behind this story?
Swati Mestri holds a bachelor's degree in Electronics Engineering and has worked as a content editor since 2019. She has experience editing research documents across technology, health care, and materials science, and has a particular interest in technology and space. Full profile →
Master's in physics with research experience. Long-time science news enthusiast. Plays key role in Science X's editorial success. Full profile →
Citation: New 200Gbps photodetector doubles optical reception capacity for data centers (2026, July 13) retrieved 13 July 2026 from https://phys.org/news/2026-07-200gbps-photodetector-optical-reception-capacity.html
This document is subject to copyright. Apart from any fair dealing for the purpose of private study or research, no part may be reproduced without the written permission. The content is provided for information purposes only.